Selective growth of Ge nanowires by low-temperature thermal evaporation

Nanotechnology

Volumn 19, Issue 43, 2008, Pages

  Sutter, Eli ^a   Ozturk, Birol ^a   Sutter, Peter ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AGRICULTURAL PRODUCTS; ELECTRIC PROPERTIES; ELECTRIC WIRE; EVAPORATION; GERMANIUM; GOLD; MOISTURE; NANOSTRUCTURED MATERIALS; NANOSTRUCTURES; NANOWIRES; POWDERS; SILICON; SILICON COMPOUNDS; SUBSTRATES; VAPORS;

AU GROWTHS; AU NANOPARTICLES; AU PARTICLES; ELECTRICAL PROPERTIES; GE NANOWIRES; NANOWIRE GROWTHS; SELECTIVE GROWTHS; SI (100) SUBSTRATES; SI SUBSTRATES; SOLID GROWTHS; SOURCE TEMPERATURES; SUBSTRATE TEMPERATURES; UPPER BOUNDS;

THERMAL EVAPORATION;

ACETYLENE; ALUMINUM; CARBON NANOTUBE; DOUBLE WALLED NANOTUBE; IRON; SINGLE WALLED NANOTUBE;

ARTICLE; CATALYST SUPPORT; DILUTION CURVE; GAS ANALYSIS; PRIORITY JOURNAL; SCANNING ELECTRON MICROSCOPY; TEMPERATURE SENSITIVITY;

EID: 56349104218     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/19/43/435607     Document Type: Article

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