Proton radiation hardness of single-nanowire transistors using robust organic gate nanodielectrics

Applied Physics Letters

Volumn 89, Issue 7, 2006, Pages

  Ju, Sanghyun ^a   Lee, Kangho ^a   Janes, David B ^a   Dwivedi, Ramesh C ^b   Baffour Awuah, Habibah ^b   Wilkins, R ^b   Yoon, Myung Han ^c   Facchetti, Antonio ^c   Mark, Tobin J ^c  

^a PURDUE UNIVERSITY   (United States)

^b Texas A M University System   (United States)

^c NORTHWESTERN UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GATE DIELECTRICS; GATE INSULATORS; NANOWIRE FIELD EFFECT TRANSISTORS(NW-FET); SELF-ASSEMBLED SUPERLATTICES (SAS);

DOSIMETRY; NANOSTRUCTURED MATERIALS; PROTON IRRADIATION; RADIATION EFFECTS; RADIATION HARDENING; SUPERLATTICES; ZINC OXIDE;

FIELD EFFECT TRANSISTORS;

EID: 33747454960     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2336744     Document Type: Article

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