Crystal order in pentacene thin films grown on SiO2 and its influence on electronic band structure

Organic Electronics

Volumn 12, Issue 1, 2011, Pages 195-201

  Matsubara, R ^a   Sakai, M ^a   Kudo, K ^a   Yoshimoto, N ^b   Hirosawa, I ^c   Nakamura, M ^a  

^a CHIBA UNIVERSITY   (Japan)

^b IWATE UNIVERSITY   (Japan)

^c JAPAN SYNCHROTRON RADIATION RESEARCH INSTITUTE   (Japan)

Author keywords

Electronic band structure; Grazing incidence X ray diffraction; HOMO band edge fluctuation; In plane crystallite size; Organic thin film transistor; Pentacene

Indexed keywords

BAND STRUCTURE; CHROMIUM COMPOUNDS; CRYSTAL STRUCTURE; ELECTRONIC STRUCTURE; FIELD EFFECT TRANSISTORS; GRAIN GROWTH; SEMICONDUCTING ORGANIC COMPOUNDS; SILICA; SYNCHROTRON RADIATION; THIN FILM TRANSISTORS; THIN FILMS; X RAY DIFFRACTION;

BAND EDGE; ELECTRONIC BAND STRUCTURE; GRAZING INCIDENCE X-RAY DIFFRACTION; ORGANIC THIN FILM TRANSISTORS; PENTACENES;

CRYSTALLITE SIZE;

EID: 78649523321     PISSN: 15661199     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.orgel.2010.10.024     Document Type: Article

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