Extrinsic limiting factors of carrier transport in organic field-effect transistors

Applied Physics A: Materials Science and Processing

Volumn 95, Issue 1, 2009, Pages 73-80

  Nakamura, Masakazu ^a   Ohguri, Hirokazu ^a   Goto, Naoyuki ^a   Tomii, Hiroshi ^a   Xu, Mingsheng ^a,c   Miyamoto, Takashi ^d   Matsubara, Ryousuke ^a   Ohashi, Noboru ^a,b   Sakai, Masaaki ^a   Kudo, Kazuhiro ^a  

^a CHIBA UNIVERSITY   (Japan)

^b NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

^c NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^d TORAY RESEARCH CENTER INC   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER MOBILITY; GRAIN BOUNDARIES; GRAIN GROWTH; GRAIN SIZE AND SHAPE; MESFET DEVICES; THERMAL EFFECTS;

APPARENT MOBILITIES; AVERAGE GRAIN SIZES; BOTTOM CONTACTS; DIFFUSION THEORIES; EXTRINSIC FACTORS; FIELD-EFFECT MOBILITIES; FOUR POINT PROBES; GRAIN STRUCTURES; HIGH MOBILITIES; HIGH TEMPERATURE RANGES; INTRINSIC MECHANISMS; LIMITING FACTORS; ORGANIC FETS; ORGANIC FIELD-EFFECT TRANSISTORS; PENTACENE; POLYCRYSTALLINE MODELS; POTENTIAL DISTRIBUTIONS; POTENTIOMETRY; SOURCE/DRAIN ELECTRODES;

FIELD EFFECT TRANSISTORS;

EID: 60749118877     PISSN: 09478396     EISSN: 14320630     Source Type: Journal    
DOI: 10.1007/s00339-008-4991-3     Document Type: Article

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