Strain mapping for the semiconductor industry by dark-field electron holography and nanobeam electron diffraction with nm resolution

Semiconductor Science and Technology

Volumn 25, Issue 9, 2010, Pages

  Cooper, David ^a   Béché, Armand ^a   Hartmann, Jean Michel ^a   Carron, Veronique ^a   Rouvière, Jean Luc ^a  

^a CEA GRENOBLE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

COMPRESSIVE STRAIN; CONDUCTION CHANNEL; DARK-FIELD; GATE LENGTH; GE CONCENTRATIONS; LINE PROFILES; NANOBEAM ELECTRON DIFFRACTION; NM RESOLUTION; SCALE RESOLUTION; SEMICONDUCTOR INDUSTRY; SILICIDATION PROCESS; STRAIN MAPPING; STRAIN MAPS;

ELECTRON DIFFRACTION; ELECTRON HOLOGRAPHY; GERMANIUM; NANOWIRES; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICES;

ELECTRONS;

EID: 78649343359     PISSN: 02681242     EISSN: 13616641     Source Type: Journal    
DOI: 10.1088/0268-1242/25/9/095012     Document Type: Article

References (15)

1. Ghani T et al 2003 IEDM Tech. Dig. p 1161
2. Gouye A, Hue F, Halimaoui A, Kermarrec O, Campidelli Y, Hytch M, Houdellier F, Claverie A and Bensahel D 2009 Mater. Sci. Semicond. Process. 12 34
3. International Technology Roadmap for Semiconductors 2007 Semiconductor Industry Association, San Jose, CA http://public.itrs.net
4. Hytch M, Houdellier F, Hue F and Snoeck E 2008 Nature 453 1086
5. Hytch M, Snoeck E and Kilaas R 1998 Ultramicroscopy 74 131
6. Rouviere J-L and Sarigiannidou E 2005 Ultramicroscopy 106 1-17
7. Hue F, Hytch M, Houdellier F, Bender H and Claverie A 2009 Appl. Phys. Lett. 95 073103
8. Cooper D, Truche R, Rivallin P, Hartmann J-M, Laugier F, Bertin F and Chabli A 2007 Appl. Phys. Lett. 91 143501
9. Cooper D, Béché A, Hartmann J-M, Barnes J-P and Rouvière J-L 2009 Appl. Phys. Lett. 95 053501
10. Clément L, Pantel R, Kwakmann L F and Rouvière J-L 2004 Appl. Phys. Lett. 85 651
11. Usada K, Numata T, Irisawa T, Hiritasha N and Takagi S 2005 Mater. Sci. Eng. B 124 143
12. Béché A, Hartmann J-M, Clément L and Rouvière J-L 2009 Appl. Phys. Lett. 95 123114
13. Lavoie C, d'Heurle F M, Detavenier C and Cabral C 2003 Microelectron. Eng. 70 144
14. Wang Y Y, Kawasaki M, Bruley J, Gribelyuk M, Domenicucci A and Gaudiello J 2004 Ultramicroscopy 101 63
15. Mayuzumi S, Yamakawa S, Kosemura D, Takei M, Tateshita Y, Wakabuyashi H, Tsukamoto M, Ohno T, Oguro A and Nagashima N 2009 IEEE Trans. Electron Devices 56 2778