Selective growth of tensily strained Si1-yCy films on patterned Si substrates

Materials Science in Semiconductor Processing

Volumn 12, Issue 1-2, 2009, Pages 34-39

  Gouye A ^a   Hue F ^b   Halimaoui, A ^a   Kermarrec, O ^a   Campidelli, Y ^a   Hytch M J ^b   Houdellier, F ^b   Claverie, A ^b   Bensahel, D ^a  

^a STMICROELECTRONICS   (France)

^b CEMES CNRS   (France)

Author keywords

Cyclic deposition etching process; Low temperature CVD; Recessed Si1 yCy films; Selective growth; Strain measurements

Indexed keywords

ADVANCED STRUCTURE; CHEMICAL VAPOR ETCHING; CRYSTALLINE LAYERS; CRYSTALLINE SI; CYCLIC DEPOSITION/ETCHING PROCESS; CYCLIC PROCESS; DARK-FIELD; ETCHING RATE; ETCHING STEP; FILM DEPOSITION; GLOBAL TIME; LOW-TEMPERATURE CVD; MASS FLOW RATIOS; METHYLSILANES; POLY-SI GATES; POLYCRYSTALLINE; RECESSED S/D; RECESSED SI1-YCY FILMS; REPEATED CYCLE; SELECTIVE GROWTH; SHALLOW TRENCH ISOLATION; SI SUBSTRATES; SOURCE AND DRAINS; STRAINED-SI; TEM; TRANSISTOR LEVEL; TRISILANES;

CHEMICAL VAPOR DEPOSITION; ETCHING; HOLOGRAPHIC INTERFEROMETRY; HYDROGEN; MASS TRANSFER; POLYSILICON; SEMICONDUCTING SILICON; SPEECH ANALYSIS; STRAIN GAGES; STRAIN MEASUREMENT;

CRYSTALLINE MATERIALS;

EID: 70350574003     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2009.07.006     Document Type: Article

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