Synthesis and structural properties of GaN particles from GaO2H powders

Diamond and Related Materials

Volumn 14, Issue 10, 2005, Pages 1730-1734

  Xiao, Hong Di ^a   Ma, Hong Lei ^a   Xue, Cheng Shan ^b   Hu, Wen Rong ^a   Ma, Jin ^a   Zong, Fu Jian ^a   Zhang, Xi Jian ^a   Ji, Feng ^a  

^a SHANDONG UNIVERSITY   (China)

^b SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

Ga2O3; GaN; GaO2H; Nitridation temperature; Synthesis

Indexed keywords

FOURIER TRANSFORM INFRARED SPECTROSCOPY; HEAT TREATMENT; LATTICE CONSTANTS; SINGLE CRYSTALS; STOICHIOMETRY; STRUCTURE (COMPOSITION); SYNTHESIS (CHEMICAL); TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

Β-GA2O3; GAN; GAO2H; NITRIDATION TEMPERATURE;

GALLIUM NITRIDE;

EID: 24144483536     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2005.06.024     Document Type: Article

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