Core-level photoemission spectroscopy of nitrogen bonding in GaN xAs1-x alloys

Applied Physics Letters

Volumn 85, Issue 9, 2004, Pages 1550-1552

  Veal, T D ^a   Mahboob, I ^a   Piper, L F J ^a   McConville, C F ^a   Hopkinson, M ^b  

^a UNIVERSITY OF WARWICK   (United Kingdom)

^b UNIVERSITY OF SHEFFIELD   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BINDING ENERGY; CHEMICAL BONDS; LATTICE CONSTANTS; MOLECULAR BEAM EPITAXY; NITROGEN; PHOTOEMISSION; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM ARSENIDE; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

BRAGG REFLECTIONS; CORE-LEVEL PHOTOEMISION SPECTROSCOPY; HIGH-RESOLUTION X-RAY DIFFRACTION (HRXRD); NITROGEN BONDING; PHOTOELECTRONS;

GALLIUM ALLOYS;

EID: 4944231844     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1784886     Document Type: Article

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