Preparation and structural properties for GaN films grown on Si (1 1 1) by annealing

Applied Surface Science

Volumn 193, Issue 1-4, 2002, Pages 254-260

  Yang, Ying Ge ^a   Ma, Hong Lei ^a   Xue, Cheng Shan ^b   Zhuang, Hui Zhao ^b   Hao, Xiao Tao ^a   Ma, Jin ^a   Teng, Shu Yun ^b  

^a SHANDONG UNIVERSITY   (China)

^b SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

Annealing; Gallium nitride films; r.f. magnetron sputtering

Indexed keywords

ANNEALING; ATOMIC FORCE MICROSCOPY; FILM GROWTH; GRAIN SIZE AND SHAPE; MAGNETRON SPUTTERING; MORPHOLOGY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING SILICON; X RAY DIFFRACTION ANALYSIS; X RAY PHOTOELECTRON SPECTROSCOPY;

VACUUM REACTIVE EVAPORATION;

SEMICONDUCTING FILMS;

EID: 0037024492     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(02)00490-7     Document Type: Article

References (16)