Fabrication of GaN nanowires by ammoniating Ga2O 3/Al2O3 thin films deposited on Si(111) with radio frequency magnetron sputtering

Nanotechnology

Volumn 15, Issue 7, 2004, Pages 724-726

  Xue, Chengshan ^a   Wei, Qinqin ^a   Sun, Zhencui ^a   Dong, Zhihua ^a   Sun, Haibo ^a   Shi, Liwei ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINA; DEPOSITION; HIGH RESOLUTION ELECTRON MICROSCOPY; MAGNETRON SPUTTERING; NANOSTRUCTURED MATERIALS; SCANNING ELECTRON MICROSCOPY; SILICON; THIN FILMS; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

AXIS ALIGNMENTS; CYLINDRICAL STRUCTURES; GROWTH ORIENTATIONS; NANOWIRES;

GALLIUM NITRIDE;

EID: 3142704267     PISSN: 09574484     EISSN: None     Source Type: Journal    
DOI: 10.1088/0957-4484/15/7/002     Document Type: Article

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