Substrate-polarity dependence of metal-organic vapor-phase epitaxy-grown GaN on SiC

Journal of Applied Physics

Volumn 64, Issue 9, 1988, Pages 4531-4535

  Sasaki, T ^a   Matsuoka, T ^a  

^a NTT CORPORATION   (Japan)

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[No Author keywords available]

Indexed keywords

EID: 0004682375     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.341281     Document Type: Article

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