Influence of Mg doping on GaN nanowires

ChemPhysChem

Volumn 10, Issue 3, 2009, Pages 571-575

  Zhang, Dongdong ^a   Xue, Chengshan ^a   Zhuang, Huizhao ^a   Sun, Haibo ^a   Cao, Yuping ^a   Huang, Yinglong ^a   Wang, Zouping ^a   Wang, Ying ^a  

^a SHANDONG NORMAL UNIVERSITY   (China)

Author keywords

Crystal growth; Luminescence; Nanostructures; Nitrides; Semiconductor

Indexed keywords

CRYSTAL ATOMIC STRUCTURE; CRYSTAL GROWTH; CRYSTALLINITY; ENERGY DISPERSIVE SPECTROSCOPY; GALLIUM NITRIDE; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; III-V SEMICONDUCTORS; LUMINESCENCE; MORPHOLOGY; NANOSTRUCTURES; NANOWIRES; NITRIDES; OPTICAL PROPERTIES; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR DOPING; SEMICONDUCTOR MATERIALS; WIDE BAND GAP SEMICONDUCTORS;

DOPANT CONCENTRATIONS; ENERGY DISPERSIVE X RAY SPECTROSCOPY; GAN NANOWIRES; GROWTH MECHANISMS; PL SPECTRA; ROOM-TEMPERATURE PHOTOLUMINESCENCE; SINGLE-CRYSTALLINE; SINGLE-CRYSTALLINE STRUCTURES;

MAGNESIUM;

EID: 60849102152     PISSN: 14394235     EISSN: 14397641     Source Type: Journal    
DOI: 10.1002/cphc.200800529     Document Type: Article

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