Continuous evolution of lithographic films through process steps: An example with 193 chemically amplified resists

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 7639, Issue , 2010, Pages

  Derrough, Samir ^a   Tiron, Raluca ^a   Perret, Damien ^b   Thackeray, James W ^c   Sourd, Claire ^a   Paniez, Patrick ^d  

^a CEA GRENOBLE   (France)

^b MINATEC   (France)

^c Dow Electronic Materials   (United States)

^d Laboratoire Interdisciplinaire de Physique   (France)

Author keywords

193 nm chemically amplified resist; diffusion; DSC; glass transition; PAB; PAG; PEB; thermal analysis

Indexed keywords

193 NM CHEMICALLY AMPLIFIED RESIST; ANNEALING CONDITION; CHARACTERIZATION TECHNIQUES; CHEMICALLY AMPLIFIED RESIST; COMPLEX SYSTEMS; CRITICAL DIMENSION; LINE EDGE ROUGHNESS; PERFORMANCE REQUIREMENTS; PHYSICOCHEMICAL PROPERTY; POTENTIAL MECHANISM; PROCESS CONDITION; PROCESS STEPS; RESIST FILMS; THERMAL ANALYSIS;

CHEMICAL PROPERTIES; ELECTRON BEAM LITHOGRAPHY; GLASS; PHOTORESISTS; SENSITIVITY ANALYSIS; THERMOANALYSIS;

GLASS TRANSITION;

EID: 77953514530     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.846087     Document Type: Conference Paper

References (10)

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