A comparison between irradiated magnetic Czochralski and float zone silicon detectors using the transient current technique

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 555, Issue 1-2, 2005, Pages 113-124

  Bates, Alison G ^a,b   Moll, Michael ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b CERN   (Switzerland)

Author keywords

Effective trapping times; Magnetic Czochralski silicon; Transient current technique

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; IRRADIATION; MAGNETIC FIELD EFFECTS; PROTONS; RADIATION DAMAGE; SILICON;

DEPLETION VOLTAGE; EFFECTIVE TRAPPING TIME; MAGNETIC CZOCHRALSKI SILICON; TRANSIENT CURRENT TECHNIQUE;

PARTICLE DETECTORS;

EID: 28044447837     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.09.020     Document Type: Article

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