Space charge sign inversion and electric field reconstruction in 24 GeV/c proton-irradiated MCz Si p+-n(TD)-n+ detectors processed via thermal donor introduction

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 598, Issue 2, 2009, Pages 416-421

  Li, Z ^a   Verbitskaya, E ^a,b   Carini, G ^a   Chen, W ^a   Eremin, V ^b   Gul, R ^a   Harkonen J ^c   Li, M ^a  

^a BROOKHAVEN NATIONAL LABORATORY   (United States)

^b IOFFE INSTITUTE   (Russian Federation)

^c CERN   (Switzerland)

Author keywords

DJ; DP; Radiation hardness; SCSI; Si detectors; Thermal donors

Indexed keywords

CHARGE TRAPPING; DETECTORS; DYNAMIC POSITIONING; ELECTRIC FIELD EFFECTS; ELECTRIC FIELD MEASUREMENT; ELECTRIC FIELDS; ELECTRIC LOSSES; ELECTRIC POWER PLANTS; MAGNETIC FIELD EFFECTS; MOTION CONTROL; PERCOLATION (SOLID STATE); PLASMAS; PROTONS; RADIATION EFFECTS; REPAIR; RESTORATION; SEMICONDUCTING SILICON COMPOUNDS; SILICON; WAVE EFFECTS;

DJ; DP; RADIATION HARDNESS; SCSI; SI DETECTORS; THERMAL DONORS;

RADIATION DETECTORS;

EID: 57649088476     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2008.09.004     Document Type: Article

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