Operation of heavily irradiated silicon detectors in non-depletion mode

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 557, Issue 2, 2006, Pages 528-536

  Verbitskaya, E ^a   Eremin, V ^a   Ilyashenko, I ^a   Li, Z ^b   Harkonen J ^c   Tuovinen, E ^c   Luukka, P ^c  

^a IOFFE INSTITUTE   (Russian Federation)

^b BROOKHAVEN NATIONAL LABORATORY   (United States)

^c CERN   (Switzerland)

Author keywords

Carrier trapping; Charge collection efficiency; Electric field distribution; Radiation hardness; Silicon detectors

Indexed keywords

ELECTRIC CONDUCTIVITY; ELECTRIC FIELD EFFECTS; ELECTRIC POWER DISTRIBUTION; IRRADIATION; RADIATION EFFECTS; SILICON;

CARRIER TRAPPING; CHARGE COLLECTION EFFICIENCY; ELECTRIC FIELD DISTRIBUTION; RADIATION HARDNESS; SILICON DETECTORS;

RADIATION DETECTORS;

EID: 31444449986     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2005.10.126     Document Type: Article

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