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Volumn 612, Issue 3, 2010, Pages 539-548

Equal-double junctions in 24 GeV/c proton-irradiated MCZ n- and p-type Si detectors: A systematic transient current technique investigation

Author keywords

DJ; DP; Equal double peak (EDP); Radiation hardness; SCSI; Si detectors

Indexed keywords

CONTROL SET; DOUBLE PEAK; FLUENCE RANGE; FLUENCES; FULL-DEPLETION VOLTAGE; MAGNETIC CZOCHRALSKI; NEGATIVE SPACE CHARGE; P-TYPE; P-TYPE SI; PEAK EFFECTS; RADIATION HARDNESS; RED LASERS; ROOM TEMPERATURE; SI DETECTORS; SPACE CHARGE SIGN INVERSIONS; TRANSIENT CURRENT; TRANSIENT CURRENT TECHNIQUE;

EID: 73649142410     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2009.08.082     Document Type: Article
Times cited : (2)

References (22)
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  • 15
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    • Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons
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    • (2000) Presented at the CERN RD48 Workshop
    • Chilingarov, A.1
  • 16
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    • Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions
    • G. Kramberger, et al., Effective trapping time of electrons and holes in different silicon materials irradiated with neutrons, protons and pions, Presented at the CERN RD48 Workshop, Geneva, March, 2000, Rose Technical Note, 2001, ROSETN01-01, 〈http://rd48.web.cern.ch/RD48/technical-notes/rosetn01-01.pdf〉.
    • Presented at the CERN RD48 Workshop, Geneva, March, 2000, Rose Technical Note, 2001, ROSETN01-01
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  • 21
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    • Radiation induced point- and cluster-related defects with strong impact to damage properties of silicon detectors
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    • I Pintile, Radiation induced point- and cluster-related defects with strong impact to damage properties of silicon detectors, Presented at the IEEE Nuclear Science Symposium, Dresden, Germany, October 20-24, 2008.
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    • Pintile, I.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.