Photoluminescence characteristics of polar and nonpolar AlGaN/GaN superlattices

Applied Physics Letters

Volumn 97, Issue 12, 2010, Pages

  Vashaei, Z ^a   Bayram, C ^a   Lavenus, P ^a   Razeghi, M ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN/GAN; CRYSTALLINE ORIENTATIONS; EXCITATION POWER DENSITY; FREESTANDING GAN SUBSTRATES; HIGH QUALITY; HIGH RESOLUTION X RAY DIFFRACTION; INTERNAL ELECTRIC FIELDS; METALORGANIC CHEMICAL VAPOR DEPOSITION; NON-POLAR; NONPOLAR M-PLANE; PEAK ENERGY; PHOTOLUMINESCENCE CHARACTERISTICS; PL INTENSITY; POLAR SUBSTRATES; POLARIZATION FIELD; ROOM TEMPERATURE; THEORETICAL MODELS; WELL WIDTH;

ATOMIC FORCE MICROSCOPY; ELECTRIC FIELDS; GALLIUM NITRIDE; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; PHOTOLUMINESCENCE; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; SUPERLATTICES; X RAY DIFFRACTION;

GALLIUM ALLOYS;

EID: 77957115639     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3493185     Document Type: Article

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