Characterization of transparent and conducting Sn-doped β-Ga2O3 single crystal after annealing

Thin Solid Films

Volumn 516, Issue 17, 2008, Pages 5763-5767

  Ohira, Shigeo ^a,c   Suzuki, Norihito ^a   Arai, Naoki ^a   Tanaka, Masahiko ^b   Sugawara, Takamasa ^c   Nakajima, Kazuo ^c   Shishido, Toetsu ^c  

^a Nippon Light Metal Company Ltd   (Japan)

^b NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^c TOHOKU UNIVERSITY   (Japan)

Author keywords

Ga2O3 single crystal; Annealing; Electrical resistivity; Optical transmittance; Sn doping

Indexed keywords

CRYSTAL GROWTH; DOPING (ADDITIVES); ELECTRIC CONDUCTIVITY; GALLIUM COMPOUNDS; OPACITY; SURFACE MORPHOLOGY;

FLOATING ZONE METHOD; TRANSPARENT SINGLE CRYSTALS;

SINGLE CRYSTALS;

EID: 44249115582     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2007.10.083     Document Type: Article

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