Coupled electron-hole dynamics at the Si/SiO2 interface

Physical Review Letters

Volumn 81, Issue 19, 1998, Pages 4224-4227

  Wang, W ^a   Lupke G ^a   di Ventra, M ^a   Pantelides, S T ^a   Gilligan, J M ^a   Kizilyalli, I C ^b   Roy, P K ^b   Margaritondo, G ^c   Lucovsky, G ^d  

^a VANDERBILT UNIVERSITY   (United States)

^b NOKIA RESEARCH CENTER   (United States)

^c EPFL   (Switzerland)

^d Campus Box 7908   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000863062     PISSN: 00319007     EISSN: 10797114     Source Type: Journal    
DOI: 10.1103/PhysRevLett.81.4224     Document Type: Article

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