Two-color optical technique for characterization of x-ray radiation-enhanced electron transport in SiO2

Journal of Applied Physics

Volumn 93, Issue 4, 2003, Pages 1865-1870

  Marka, Z ^a   Pasternak, R ^a   Albridge, R G ^a   Rashkeev, S N ^a   Pantelides, S T ^a   Tolk, N H ^a   Choi, B K ^b   Fleetwood, D M ^b   Schrimpf, R D ^b  

^a VANDERBILT UNIVERSITY   (United States)

^b VANDERBILT UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TRAPS; ELECTRON TUNNELING; INTERFACES (MATERIALS); IRRADIATION; LASER APPLICATIONS; SECOND HARMONIC GENERATION; SILICA; X RAYS;

ELECTRON INJECTION;

IMAGING TECHNIQUES;

EID: 0037443046     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1534904     Document Type: Article

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