Application of UV-Raman spectroscopy for characterization of the physical crystal structure following flash anneal of an ultrashallow implanted layer

Journal of the Electrochemical Society

Volumn 153, Issue 7, 2006, Pages

  Yoshimoto, Masahiro ^a   Nishigaki, Hiroshi ^a   Harima, Hiroshi ^a   Isshiki, Toshiyuki ^a   Kang, Kitaek ^b   Yoo, Woo Sik ^b  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b WaferMasters Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHIZATION; ANNEALING; NONDESTRUCTIVE EXAMINATION; RAMAN SPECTROSCOPY; RECRYSTALLIZATION (METALLURGY); SECONDARY ION MASS SPECTROMETRY; TRANSMISSION ELECTRON MICROSCOPY;

NONDESTRUCTIVE RAMAN SPECTROSCOPY; RECRYSTALLIZED LAYER; ULTRASHALLOW JUNCTION FORMATION;

CRYSTAL STRUCTURE;

EID: 33744832628     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.2201551     Document Type: Article

References (13)

1. D. C. Jennings, G. de Cock, and M. A. Foad, in Proceedings of the 6th International Conference on Advanced Thermal Processing of Semiconductors-RTP '98, p. 187 (1998).
2. A. Jain, in Rapid Thermal and Other Short-Time Processing Technologies II, F. Roozeboom, J. C. Gelpey, M. C. ztürk, K. Reid, and, D. L. Kwong, Editors, PV 2000-9, p. 33, The Electrochemical Society Proceedings Series, Pennington, NJ (2000).
3. S. Talwar, Y. Wang, and C. Gelatos, in Rapid Thermal and Other Short-Time Processing Technologies II, F. Roozeboom, J. C. Gelpey, M. C. ztürk, K. Reid, and, D. L. Kwong, Editors, PV 2000-9, p. 95, The Electrochemical Society Proceedings Series, Pennington, NJ (2000).
4. R. S. Tichy, K. Elliott, S. McCoy, and D. Sing, in Proceedings of the 9th International Conference on Advanced Thermal Processing of Semiconductors-RTP 2001, p. 87 (2001).
5. T. Ito, T. Iinuma, A. Murakoshi, H. Akutsu, K. Suguro, T. Arikado, K. Okumura, M. Yoshioka, T. Owada, Y. Imaoka, H. Murayama, and T. Kusuda, Jpn. J. Appl. Phys., Part 1, 41, 2394 (2002).
6. W. S. Yoo and K. Kang, in Advanced Short-Time Thermal Processing for Si-Based CMOS Devices, F. Roozeboom, E. Gusev, L. J. Chen, M. C. ztürk, K. Reid, D. L. Kwong, and, P. J. Timans, Editors, PV 2003-14, p. 111, The Electrochemical Society Proceedings Series, Pennington, NJ (2003).
7. S. Talwar, D. Markle, and M. Thompson, Solid State Technol., 46, 83 (2003).
8. W. S. Yoo and K. Kang, in Advanced Short-Time Thermal Processing for Si-Based CMOS Devices II, M. C. ztürk, F. Roozeboom, P. J. Timans, E. P. Gusev, Editors, G. Miner, L. J. Chen, and, D. L. Kwong, PV 2004-01, p. 3, The Electrochemical Society Proceedings Series, Pennington, NJ (2004).
9. J. F. Ziegler, J. P. Biersack, and U. Littmark, The Stopping and Range of Ions in Solids, Pergamon Press, New York (1985), and http://www.srim.org/
10. I. H. Campbell and P. M. Fauchet, Solid State Commun., 58, 739 (1986).
11. T. Suzuki, M. Seto, N. Suzuki, K. Kang, and W. S. Yoo, in Advanced Gate Stack, Source/Drain, and Channel Engineering for Si-Based CMOS: New Materials, Processes, and Equipment, E. P. Gusev, L. J. Chen, P. J. Timans, F. Roozeboom, M. C. ztürk, D. L. Kwong, and, H. Iwai, Editor, PV 2005-05, p. 68, The Electrochemical Society Proceedings Series, Pennington, NJ (2005).
12. S. Ruffell, P. J. Simpson, and I. V. Mitchell, J. Appl. Phys., 98, 013713 (2005).
13. W. S. Yoo, T. Fukada, T. Setokubo, K. Aizawa, and T. Ohsawa, Jpn. J. Appl. Phys., Part 1, 42, 1123 (2003).