Raman study on the process of Si advanced integrated circuits

14th IEEE International Conference on Advanced Thermal Processing of Semiconductors, RTP 2006

Volumn , Issue , 2006, Pages 211-215

  Nishibe, S ^a   Sasaki, T ^a   Harima, H ^a   Kisoda, K ^b   Yamazaki, T ^c   Yoo, W S ^c  

^a KYOTO INSTITUTE OF TECHNOLOGY   (Japan)

^b WAKAYAMA UNIVERSITY   (Japan)

^c WaferMasters Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALS; ELECTRIC CONDUCTIVITY; INTEGRATED CIRCUITS; INTERNET PROTOCOLS; RAPID THERMAL ANNEALING; SEMICONDUCTOR MATERIALS; SILICON; SILICON WAFERS;

DIFFERENT PROCESSES; ELECTRONIC DEVICES; FABRICATION PROCESSES; FABRICATION PROCESSING; INTEGRATION TECHNOLOGIES; NON CONTACTS; NONDESTRUCTIVE; PHYSICAL ASPECTS; PRECISE CONTROLS; RAMAN MICROPROBE; RAMAN STUDIES; SI DEVICES;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 48349083094     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/RTP.2006.368002     Document Type: Conference Paper

References (3)

1. D. Wolf, J. Raman Spectrosc. 30 (1999, 1) 877-833.
2. I.H.Campbell and P.M.Fauchet, Solid State Comm. 58 (1986) 739.
3. X.Huang, F.Ninio, L.Brown, and S.Prawer, J. Appl. Phys. 77 (1995) 5910.