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Volumn 13, Issue 1, 2008, Pages 359-366
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Characterization of process induced surface profiles and lattice strains using optical surface profilometry and multi-wavelength Raman Spectroscopy
a
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Author keywords
[No Author keywords available]
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Indexed keywords
BEFORE AND AFTER;
CAPPING LAYERS;
DIFFRACTION AND SCATTERINGS;
FOUR POINTS;
INLINE PROCESSES;
LATTICE STRAINS;
MATERIAL PROPERTIES;
MONITORING METHODS;
MULTI WAVELENGTHS;
NI FILMS;
OPTICAL SURFACES;
PROCESS DEVELOPMENTS;
RAMAN CHARACTERIZATIONS;
SEMICONDUCTOR MANUFACTURING;
SHEET RESISTANCE MEASUREMENTS;
SI WAFERS;
SURFACE PROFILES;
TEMPERATURE SENSITIVITIES;
WAFER SURFACES;
WITH OR WITHOUT;
YIELD RAMPS;
ANNEALING;
ELECTRIC RESISTANCE;
ELECTRIC RESISTANCE MEASUREMENT;
LOGIC GATES;
NICKEL ALLOYS;
PHASE INTERFACES;
PHASE TRANSITIONS;
PROCESS ENGINEERING;
PROCESS MONITORING;
PROFILOMETRY;
RAMAN SCATTERING;
RAMAN SPECTROSCOPY;
RECONNAISSANCE AIRCRAFT;
SEMICONDUCTING INDIUM;
SEMICONDUCTING SILICON COMPOUNDS;
SHEET RESISTANCE;
SILICON;
SILICON WAFERS;
SPECTRUM ANALYSIS;
TIN;
TITANIUM COMPOUNDS;
TITANIUM NITRIDE;
SURFACES;
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EID: 55649088441
PISSN: 19385862
EISSN: 19386737
Source Type: Conference Proceeding
DOI: 10.1149/1.2911518 Document Type: Conference Paper |
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Times cited : (11)
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References (8)
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