Characterizations of AgInSbTe and its nanocomposite thin films for phase-change memory applications

Journal of the Electrochemical Society

Volumn 157, Issue 12, 2010, Pages

  Huang, Yu Jen ^a   Chung, Tzu Chin ^a   Wang, Chiung Hsin ^a   Hsieh, Tsung Eong ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

AGINSBTE; AVRAMI EXPONENT; ELECTRICAL PROPERTY MEASUREMENT; HETEROGENEOUS PHASE; IN-SITU; IV CHARACTERISTICS; JOHNSON-MEHL-AVRAMI ANALYSIS; KISSINGER; MICROSTRUCTURE CHARACTERIZATION; NANO-COMPOSITE LAYERS; NANOCOMPOSITE THIN FILMS; PHASE TRANSITION KINETICS; RECRYSTALLIZATION TEMPERATURES; SAMPLE MATRIX; SWITCHING BEHAVIORS;

ACTIVATION ENERGY; ELECTRIC PROPERTIES; GRAIN GROWTH; GRAIN REFINEMENT; GRAIN SIZE AND SHAPE; MICROSTRUCTURE; NANOCOMPOSITES; PHASE CHANGE MEMORY; POLYMER BLENDS; SILICON; TRANSMISSION ELECTRON MICROSCOPY; X RAY DIFFRACTION;

PHASE TRANSITIONS;

EID: 78449277513     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3502531     Document Type: Article

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