Double optical phase transition of GeSbTe thin films sandwiched between two SiN layers

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 37, Issue 4 SUPPL. A, 1998, Pages 1852-1854

  Tominaga, Junji ^a   Nakano, Takashi ^a   Atoda, Nobufumi ^a  

^a NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

Activation energy; Crystallization temperature; Ge2Sb2Te5; Johnson Mehlavrami equation; Kissinger plots; Optical phase change

Indexed keywords

ACTIVATION ENERGY; CRYSTALLIZATION; GERMANIUM COMPOUNDS; INTERFACES (MATERIALS); OPTICAL RECORDING; SILICON NITRIDE;

JOHNSON-MEHL-AVRAMI EQUATION; KISSINGER PLOTS; OPTICAL PHASE CHANGE;

OPTICAL FILMS;

EID: 0032045678     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.37.1852     Document Type: Article

References (8)

1. M. Ohshima: Proc. 4th Symp. Phase Change Optical Disc(II), Shizuoka, 1992, p. 12.
2. J. Tominaga, S. Haratani, T. Handa and K. Yanagiuchi: Jpn. J. Appl. Phys. 31 (1992) L799.
3. D. W. Henderson: J. Non-Cryst. Solids 30 (1979) 301.
4. N. Nafify: J. Non-Cryst. Solids 126 (1990) 130.
5. S. Mahadevan, A. Giridhar and A. K. Singh: J. Non-Cryst. Solids 88 (1986) 11.
6. T. Tanaka, I. Honma, H. Tamaoki and H. Komiyama: Mater. Res. Soc. Symp. Proc. 118 (1988) 343.
7. H. Situ, Z. T. Wang and A. Jung: J. Non-Cryst. Solids 113 (1989) 88.
8. S. Hosaka, T. Shintani, M. Miyamoto, A. Hirotsune, M. Terao, M. Yasuda, K. Fujita and S. Kammer: Jpn. J. Appl. Phys. 35 (1996) 443.