Analysis of polar direction of AlN grown on (0001) sapphire and 6H-SiC substrates by high-temperature metal-organic vapor phase epitaxy using coaxial impact collision ion scattering spectroscopy

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 7, Issue 10, 2010, Pages 2365-2367

  Imura, Masataka ^a   Ohnishi, Tsuyoshi ^a   Sumiya, Masatomo ^a   Liao, Meiyong ^a   Koide, Yasuo ^a   Amano, Hiroshi ^b   Lippmaa, Mikk ^c  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b MEIJO UNIVERSITY   (Japan)

^c UNIVERSITY OF TOKYO   (Japan)

Author keywords

AlN; Growth; Ion scattering; MOVPE; Spectroscopy; Structure

Indexed keywords

ALN; GROWTH; ION SCATTERING; MOVPE; STRUCTURE;

ALUMINUM; ATOMIC SPECTROSCOPY; EPITAXIAL GROWTH; IONS; METALLORGANIC VAPOR PHASE EPITAXY; PLASMA INTERACTIONS; SAPPHIRE; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE; SUBSTRATES; VAPORS;

SCATTERING;

EID: 78449242384     PISSN: 18626351     EISSN: 16101642     Source Type: Journal    
DOI: 10.1002/pssc.200983900     Document Type: Article

References (19)

1. T. Takeuchi, S. Sota, M. Katsuragawa, M. Komori, H. Takeu-chi, H. Amano, and I. Akasaki, Jpn. J. Appl. Phys. 2, 36, L382-L385 (1997).
2. J. L. Rouviere, J. L. Weyher, M. Seelmann-Eggebert, and S. Porowski, Appl. Phys. Lett. 73, 668-670 (1998).
3. T. Ohnishi, A. Ohtomo, M. Kawasaki, K. Takahashi, M. Yoshimoto, and H. Koinuma, Appl. Phys. Lett. 72, 824-826 (1998).
4. M. Sumiya, M. Tanaka, K. Ohtsuka, S. Fuke, T. Ohnishi, I. Ohkubo, M. Yoshimoto, H. Koinuma, and M. Kawasaki, Appl. Phys. Lett. 75, 674-676 (1999).
5. S. Sonoda, S. Shimizu, Y. Suzuki, K. Balakrishnan, J. Shirakashi, and H. Okumura, Jpn. J. Appl. Phys. 2(39), L73-L75 (2000).
6. J. Tafto, Phys. Rev. Lett. 51, 654-657 (1983).
7. P. Vermaut, P. Ruterana, and G. Nouet, Philos. Mag. A, Phys. Condens. Matter Struct. Defects Mech. Prop. 76, 1215-1234 (1997).
8. C. Iwamoto, X. Q. Shen, H. Okumura, H. Matuhata, and Y. Ikuhara, Appl. Phys. Lett. 79, 3941-3943 (2001).
9. J. Tafto, Acta Crystallogr. Sect. A 43, 208-211 (1987).
10. B. Daudin, J. L. Rouviere, and M. Arlery, Appl. Phys. Lett. 69, 2480-2482 (1996).
11. F. A. Ponce, D. P. Bour, W. T. Young, M. Saunders, and J. W. Steeds, Appl. Phys. Lett. 69, 337-339 (1996).
12. M. Sumiya and S. Fuke, Mrs. Internet J. Nitride Semicond. Res. 9, 34 (2004.
13. Y. Saito, Y. Tanabe, T. Yamaguchi, N. Teraguchi, A. Suzuki, T. Araki, and Y. Nanishi, Phys. Status Solidi B 228, 13-16 (2001).
14. J. Jasinski, Z. Liliental-Weber, Q. S. Paduano, and D. W. Weyburne, Appl. Phys. Lett. 83, 2811-2813 (2003).
15. Y. Wu, A. Hanlon, J. F. Kaeding, R. Sharma, P. T. Fini, S. Nakamura, and J. S. Speck, Appl. Phys. Lett. 84, 912-914 (2004).
16. M. Takeuchi, H. Shimizu, R. Kajitani, K. Kawasaki, T. Kinoshita, K. Takada, H. Murakami, Y. Kumagai, A. Koukitu, T. Koyama, S. F. Chichibu, and Y. Aoyagi, J. Cryst. Growth 305, 360-365 (2007).
17. M. Imura, K. Nakano, T. Kitano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, K. Shimono, T. Noro, T. Takagi, and A. Bandoh, Phys. Status Solidi A 203, 1626-1631 (2006).
18. M. Imura, K. Nakano, N. Fujimoto, N. Okada, K. Balakrishnan, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, T. Noro, T. Takagi, and A. Bandoh, Jpn. J. Appl. Phys. 45, 8639-8643 (2006).
19. M. Imura, H. Sugimura, N. Okada, M. Iwaya, S. Kamiyama, H. Amano, I. Akasaki, and A. Bandoh, J. Cryst. Growth 310, 2308-2313 (2008).