Ultraviolet detectors based on ZnO:N thin films with different contact structures

Acta Physica Polonica A

Volumn 114, Issue 5, 2008, Pages 1123-1129

  Ievtushenko, A ^a   Lashkarev, G ^a   Lazorenko, V ^a   Karpyna, V ^a   Sichkovskyi, V ^a   Kosyachenko, L ^b   Sklyarchuk, V ^b   Sklyarchuk, O ^b   Bosy, V ^c   Korzhinski, F ^c   Ulyashin, A ^d   Khranovskyy, V ^e   Yakimova, R ^e  

^a FRANTSEVICH INSTITUTE FOR PROBLEMS OF MATERIALS SCIENCE   (Ukraine)

^b CHERNIVTSI NATIONAL UNIVERSITY   (Ukraine)

^c JSCP SPU Saturn   (Ukraine)

^d SINTEF MATERIALS AND CHEMISTRY   (Norway)

^e LINKÖPING UNIVERSITY   (Sweden)

Author keywords

[No Author keywords available]

Indexed keywords

NICKEL; ZINC OXIDE;

CONTACT STRUCTURE; DARK CURRENT RATIO; DC MAGNETRON SPUTTERING; DIODE STRUCTURE; PHOTORESPONSES; RECTIFICATION RATIO; SI SUBSTRATES; TIME CONSTANTS;

ALUMINUM;

EID: 54949135805     PISSN: 05874246     EISSN: None     Source Type: Journal    
DOI: 10.12693/APhysPolA.114.1123     Document Type: Conference Paper

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