Effects of post-growth annealing on physical properties of SrRuO 3 thin film grown by MOCVD

Physica Status Solidi (A) Applications and Materials Science

Volumn 207, Issue 11, 2010, Pages 2492-2498

  Anooz, S Bin ^a,b   Schwarzkopf, J ^a   Dirsyte, R ^a   Wagner, G ^a   Fornari, R ^a  

^a LEIBNIZ INSTITUTE FOR CRYSTAL GROWTH   (Germany)

^b HADHRAMOUT UNIVERSITY   (Yemen)

Author keywords

annealing; MOCVD; physical properties; SrRuO 3; thin films

Indexed keywords

ANNEALING EFFECTS; ANNEALING TEMPERATURES; AS-DEPOSITED FILMS; BEFORE AND AFTER; C-AXIS ORIENTATIONS; ELECTRICAL RESISTIVITY; HIGH-RESOLUTION X-RAY DIFFRACTION; HIGHER TEMPERATURES; METALLIC TEMPERATURE DEPENDENCE; METALORGANIC CHEMICAL VAPOR DEPOSITION; MOCVD; OUT-OF-PLANE LATTICE PARAMETERS; POSTGROWTH ANNEALING; SECONDARY PHASE; SINGLE PHASE; SRRUO 3; SRTIO; STRONTIUM RUTHENATES; XRD;

ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; ELECTRIC CONDUCTIVITY; LATTICE CONSTANTS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHYSICAL PROPERTIES; RAMAN SCATTERING; RAMAN SPECTROSCOPY; RUTHENIUM; RUTHENIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS; STRONTIUM; THIN FILMS; VAPOR DEPOSITION; X RAY DIFFRACTION;

ANNEALING;

EID: 78349262306     PISSN: 18626300     EISSN: 18626319     Source Type: Journal    
DOI: 10.1002/pssa.201026400     Document Type: Article

References (34)

1. C. W. Jones, P. D. Battle, P. Lightfoot, and, W. T. A. Harrison, Acta Crystallogr. C 45, 365 (1989).
2. X. Fang, and, T. Kobayashi, J. Appl. Phys. 90, 162 (2001).
3. J. Choi, C. B. Eom, G. Rijnders, H. Rogalla, and, D. H. A. Blank, Appl. Phys. Lett. 79, 1447 (2001).
4. J. Sakai, N. Ito, S.-I. Ito, K. Takahashi, and, H. Funakubo, Appl. Phys. Lett. 89, 242115 (2006).
5. R. A. Rao, Q. Gan, and, C. B. Eom, Appl. Phys. Lett. 71, 1171 (1997).
6. N. Higashi, T. Watanabe, K. Saito, I. Yamaji, T. Akai, and, H. Funakubo, J. Cryst. Growth 229, 450 (2001).
7. A. Sumi, K. Takahashi, S. Yokoyma, H. Morioka, H. Funakubo, and, M. Yoshimota, Appl. Phys. Lett. 87, 052112 (2005).
8. H. Funakubo, T. Oikowa, N. Higashi, and, K. Saito, J. Cryst. Growth 235, 401 (2002).
9. D. Halley, C. Rossel, D. Widmer, H. Wolf, and, S. Gariglio, Mater. Sci. Eng. B 109, 113 (2004).
10. E. S. Choi, S. S. Park, and, S. G. Yoon, Integr. Ferroelectr. 47, 31 (2002).
11. H. N. Lee, H. M. Christen, M. F. Chisholm, C. M. Rouleau, and, D. H. Lowndes, Appl. Phys. Lett. 84, 4107 (2004).
12. B. Dabrowski, O. Chmaissem, P. W. Klamut, S. Kolesnik, M. Maxwell, J. Mais, Y. Ito, B. D. Armstrong, J. D. Jorgensen, and, S. Short, Phys. Rev. B 70, 014423 (2004).
13. W. Siemons, G. Koster, A. Vailionis, H. Yamamoto, D. H. A. Blank, and, M. R. Beasley, Phys. Rev. 76, 075126 (2007).
14. K. Takahashi, T. Oikawa, K. Saito, H. Fujisawa, M. Shimizu, and, H. Funakubo, Jpn. J. Appl. Phys. 41, 6873 (2002).
15. J. Sakai, N. Ito, S.-I. Ito, K. Takahashi, and, H. Funakubo, IEEE Trans. Magn. 43, 3073 (2007).
16. J. Schwarzkopf, R. Dirsyte, A. Devi, M. Schmidbauer, G. Wagner, and, R. Fornari, Thin Solid Films 518, 4675 (2010).
17. Z. C. Feng, B. S. Kwak, A. Erbil, and, L. A. Boatner, Appl. Phys. Lett. 62, 349 (1993).
18. W. G. Nilsen, and, J. G. Skinner, J. Chem. Phys. 48, 2240 (1968).
19. Y. S. Huang, and, F. H. Pollak, Solid State Commun. 43, 921 (1982).
20. S. Y. Mar, C. S. Chen, Y. S. Huang, and, K. K. Tiong, Appl. Surf. Sci. 90, 497 (1995).
21. D. Kirillov, Y. Suzuki, L. Antognazza, K. Char, I. Bozovic, and, T. H. Geballe, Phys. Rev. B 51, 12825 (1995).
22. M. N. Iliev, A. P. Litvinchuk, H.-G. Lee, C. L. Chen, M. L. Dezaneti, C. W. Chu, V. G. Ivanov, M. V. Abrashev, and, V. N. Popov, Phys. Rev. B 59, 364 (1999).
23. G. Herranz, F. Sánchez, J. Fontcuberta, M. V. Garca-Cuenca, C. Ferrater, M. Varela, T. Angelova, A. Cros, and, A. Cantarero, Phys. Rev. B 71, 174411 (2005).
24. J. R. Ferraro, and, K. Nakamoto, in: Introductory Raman Spectroscopy (Academic Press, New York, 1994).
25. C. B. Eom, R. J. Cava, R. M. Fleming, J. M. Phillips, R. B. van Dover, J. H. Marshall, J. W. P. Hsu, J. J. Krajewski, and, W. F. Peck, Jr., Science. 285, 1766 (1992).
26. R. J. Bouchard, and, J. L. Gillson, Mater. Res. Bull. 7, 873 (1972).
27. Y. Noro, and, S. Miyahara, J. Phys. Soc. Jpn. 27, 518 (1969).
28. M. Shikano, T. K. Huang, Y. Inaguma, M. Itoh, and, T. Nakamura, Solid State Commun. 90, 115 (1994).
29. X. D. Wu, S. R. Foltyn, R. C. Dye, Y. Coulter, and, R. E. Muenchhausen, Appl. Phys. Lett. 62, 2434 (1993).
30. N. Okuda, K. Saito, and, H. Funakubo, Jpn. J. Appl. Phys. 39, 572 (2000).
31. C. Xian, N. Seong, and, S. Yoon, Met. Mater. Int. 15, 89 (2009).
32. H.-C. Lee, and, D.-S. Tsai, J. Mater. Sci. 38, 2633 (2003).
33. L. Krusin-Elbaum, M. Wittmer, and, D. S. Yee, Appl. Phys. Lett. 50, 1879 (1987).
34. A. G. Schrott, J. A. Misewich, V. Nagarajan, and, R. Ramesh, Appl. Phys. Lett. 82, 4770 (2003).