Microstructure and dielectric properties of amorphous BaSm2Ti4O12 thin films for MIM capacitor

Journal of the European Ceramic Society

Volumn 27, Issue 8-9 SPEC. ISS., 2007, Pages 2849-2853

  Jeong, Young Hun ^a   Lim, Jong Bong ^a   Kim, Jae Chul ^a   Nahm, Sahn ^a   Sun, Ho Jung ^b   Lee, Hwack Joo ^c  

^a Korea University   (South Korea)

^b Kunsan National University   (South Korea)

^c Korea Research Institute of Standards and Science   (South Korea)

Author keywords

BaSm2Ti4O12; Capacitors; Electrical properties; Films

Indexed keywords

BARIUM COMPOUNDS; CAPACITORS; CURRENT DENSITY; DIELECTRIC PROPERTIES; MICROSTRUCTURE; RAPID THERMAL ANNEALING; TEMPERATURE; THIN FILMS;

CAPACITANCE DENSITY; MIM CAPACITOR; TEMPERATURE COEFFICIENT;

MIM DEVICES;

BARIUM COMPOUNDS; CAPACITORS; CURRENT DENSITY; DIELECTRIC PROPERTIES; MICROSTRUCTURE; MIM DEVICES; RAPID THERMAL ANNEALING; TEMPERATURE; THIN FILMS;

EID: 33947617865     PISSN: 09552219     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jeurceramsoc.2006.11.001     Document Type: Article

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