Investigation of strontium tantalate thin films for high-k gate dielectric applications

Materials Science in Semiconductor Processing

Volumn 9, Issue 6, 2006, Pages 1102-1107

  Silinskas, M ^a   Lisker, M ^a   Kalkofen, B ^a   Burte, E P ^a  

^a OTTO VON GUERICKE UNIVERSITY   (Germany)

Author keywords

Electrical properties; MOCVD; SrTa2O6; TEM

Indexed keywords

ANNEALING; CRYSTALLIZATION; DIELECTRIC MATERIALS; ELECTRIC PROPERTIES; METALLORGANIC CHEMICAL VAPOR DEPOSITION; STRONTIUM ALLOYS; TRANSMISSION ELECTRON MICROSCOPY;

LIQUID DELIVERY (LD); PROCESS CONDITIONS; SRTA2O6; STRONTIUM TANTALATE (STO);

THIN FILMS;

EID: 33846097718     PISSN: 13698001     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mssp.2006.10.037     Document Type: Article

References (11)

1. Chae B.-G., Lee W.J., You I.K., Ryu S.O., Yung M.Y., and Yu B.G. Jpn J Appl Phys 41 (2002) L729
2. Cho K.I., Yoon S.G., and Lee C.S. Jpn J Appl Phys 40 (2001) 6941
3. Tokumitsu E., Fujii G., and Ishiwara H. Appl Phys Lett 75 (1999) 575
4. Ruzyllo J, Lee DO, Roman P, Horn MP, et al. IEEE international symposium on semiconductor manufacturing conference, Proceedings, vol. 2, 2001. p. 71.
5. Regnery S., Thomas R., Ehrhart P., and Waser R. J Appl Phys 97 (2005) 073521
6. Vehkamaki M., Ritala M., Leskela M., Jones A., Davies H., Sajavaara T., and Rauhala E. J Electrochem Soc 151 (2004) F69
7. Jiang J., Awadelkarim O.O., Lee D.-O., Roman P., and Ruzyllo J. Solid-State Electron 46 (2002) 1991
8. Condorelli G.G., Baeri A., Fragala I.L., Lauretta V., and Smerlo G. Mater Sci Semicond Proc 5 (2002) 135
9. Silinskas M., Lisker M., Kalkofen B., Matichyn S., and Burte E.P. Lithuanian J Phys 44 (2004) 375
10. Lisker M., Silinskas M., Kalkofen B., and Burte E.P. Proc Electrochem Soc 44 (2004) 375
11. Nicollian E.H., and Brews J.R. MOS physics and technology (1982), Wiley/Interscience, New York (p. 212)