Electrical characteristics of rf-magnetron sputtered BaTa2O6 thin film

Solid-State Electronics

Volumn 43, Issue 7, 1999, Pages 1189-1193

  Kim, Y S ^a   Lee, Y H ^b   Sung, M Y ^a  

^a Korea University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BARIUM COMPOUNDS; CAPACITANCE; ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTROCHEMICAL ELECTRODES; INDIUM COMPOUNDS; LEAKAGE CURRENTS; OPTICAL PROPERTIES; PERMITTIVITY; THERMAL EFFECTS;

INDIUM TIN OXIDE; OPTICAL TRANSMITTANCE; SCHOTTKY BARRIER HEIGHTS; SCHOTTKY EMISSION; VOLTAGE POLARITY;

THIN FILMS;

EID: 0032633602     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(99)00057-X     Document Type: Article

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