Threshold voltage and mobility extraction of NBTI degradation of poly-Si thin-film transistors

IEEE Transactions on Electron Devices

Volumn 57, Issue 11, 2010, Pages 3186-3189

  Sun, Hung Chang ^a   Huang, Ching Fang ^a   Chen, Yen Ting ^a   Wu, Ting Yun ^a   Liu, Chee Wee ^a   Hsu, Y J ^b   Chen, J S ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b AU OPTRONICS CORPORATION   (Taiwan)

Author keywords

Negative bias temperature instability (NBTI); on the fly (OTF) measurement; polycrystalline silicon (poly Si); thin film transistor (TFT)

Indexed keywords

MOBILITY DEGRADATION; MOBILITY EXTRACTION; NEGATIVE BIAS TEMPERATURE INSTABILITY; ON-THE-FLY; ON-THE-FLY METHODS; POLY-SI THIN-FILM TRANSISTORS; POLYCRYSTALLINE SILICON (POLY-SI); POLYCRYSTALLINE SILICON THIN-FILM TRANSISTOR; REACTION-DIFFUSION MECHANISMS; RECOVERY EFFECTS; THRESHOLD VOLTAGE SHIFTS;

BIAS VOLTAGE; DEGRADATION; NEGATIVE TEMPERATURE COEFFICIENT; OPTICAL TRANSFER FUNCTION; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

THIN FILM TRANSISTORS;

EID: 78049303984     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2068550     Document Type: Article

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