Dynamic negative bias temperature instability (NBTI) of low-temperature polycrystalline silicon (LTPS) thin-film transistors

IEEE Electron Device Letters

Volumn 29, Issue 5, 2008, Pages 477-479

  Liao, J C ^a   Fang, Y K ^a   Kao, C H ^b   Cheng, C Y ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHANG GUNG UNIVERSITY   (Taiwan)

Author keywords

Dynamic stress; Grain boundary; Low temperature polycrystalline silicon thin film transistors (LTPS TFTs); Negative bias temperature instability (NBTI); Si SiO2 interface

Indexed keywords

CMOS INTEGRATED CIRCUITS; GRAIN BOUNDARIES; POLYSILICON; THRESHOLD VOLTAGE; VOLTAGE MEASUREMENT;

NEGATIVE BIAS TEMPERATURE INSTABILITY;

THIN FILM TRANSISTORS;

EID: 43549116826     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2008.919603     Document Type: Article

References (13)

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