Comparison of novel BTI measurements for high-k dielectric MOSFETs

ICSICT-2006: 2006 8th International Conference on Solid-State and Integrated Circuit Technology, Proceedings

Volumn , Issue , 2006, Pages 1117-1118

  Choi, Rino ^a   Heh, Dawei ^a   Kang, Chang Yong ^a   Young, Chadwin ^a   Bersuker, Gennadi ^a   Lee, Byoung Hun ^a  

^a SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; RELAXATION PROCESSES; TEMPERATURE MEASUREMENT; THRESHOLD VOLTAGE;

BIAS TEMPERATURE INSTABILITY (BTI); FAST TRANSIENT CHARGING;

MOSFET DEVICES;

EID: 34547329570     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICSICT.2006.306698     Document Type: Conference Paper

References (7)

1. M. Quevo-Lopez et al., IEDM, p.1210 (2005).
2. A. Kirber et al., in in Proc. IRPS, p 41 (2003)
3. B.H. Lee et al., IEDM p. 859 (2004)
4. R. Choi et al., Appl. P. Lett. 87, p. 122901 (2005)
5. D. Heh, to be presented in ESSDERC (2006)
6. M. Denais et al., IEDM, p. 109 (2004)
7. G. Bersuker et al., in Proc. IRPS, p. 179 (2006)