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Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 8 A, 2006, Pages 6137-6140

A simple negative bias temperature instability characterization methodology to minimize the immediate recovery effect during measurement

(4) Yang, J B a Chen, T P a Tan, S S b Chan, L b

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b CHARTERED SEMICONDUCTOR MANUFACTURING LTD (Singapore)

Author keywords

Measurement method; NBTI; Recovery effect; Stress interruption

Indexed keywords

CHARACTERIZATION; DEGRADATION; THERMODYNAMIC STABILITY; THRESHOLD VOLTAGE;

MEASUREMENT METHODS; NEGATIVE BIAS TEMPERATURE INSTABILITY (NBTI); RECOVERY EFFECT; STRESS INTERRUPTION;

MOSFET DEVICES;

EID: 33748562881 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.45.6137 Document Type: Article

Times cited : (6)

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