Dynamic bias instability of p-channel polycrystalline-silicon thin-film transistors induced by impact ionization

IEEE Electron Device Letters

Volumn 30, Issue 4, 2009, Pages 368-370

  Huang, Ching Fang ^a   Sun, Hung Chang ^a   Yang, Ying Jhe ^a   Chen, Yen Ting ^a   Ku, Chun Yuan ^a   Liu, Chee Wee ^a   Hsu, Yuan Jun ^b   Shih, Ching Chieh ^b   Chen, Jim Shone ^b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b AU OPTRONICS CORPORATION   (Taiwan)

Author keywords

Dynamic bias instability; Impact ionization; Thin film transistor (TFT)

Indexed keywords

CHANNEL REGIONS; CURRENT INCREASE; DYNAMIC BIAS INSTABILITY; DYNAMIC STRESS; EFFECTIVE CHANNEL LENGTHS; FULL DEPLETIONS; HIGH ELECTRIC FIELDS; P TYPES; POLY-CRYSTALLINE; POLY-SI; SECONDARY ELECTRONS; SHORT-CHANNEL DEVICES; STRESS TIME; THIN-FILM TRANSISTOR (TFT); TRAPPED ELECTRONS;

ATOMS; DRAIN CURRENT; ELECTRIC FIELD EFFECTS; MOSFET DEVICES; POLYSILICON; SEMICONDUCTING ORGANIC COMPOUNDS; SEMICONDUCTING SILICON COMPOUNDS; SILICON COMPOUNDS; THIN FILM DEVICES; THIN FILM TRANSISTORS; TRANSISTORS;

IMPACT IONIZATION;

EID: 67349245159     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2013644     Document Type: Article

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