메뉴 건너뛰기




Volumn 141, Issue 1, 2008, Pages 1-5

Temperature cycling of MOS-based radiation sensors

Author keywords

Dosimeter; MOS capacitor; MOS devices; Radiation effects; Radiation sensor

Indexed keywords

ANNEALING; DOSIMETERS; GAMMA RAYS; MOS CAPACITORS; RADIATION EFFECTS; TEMPERATURE CONTROL;

EID: 36348978107     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2007.07.001     Document Type: Article
Times cited : (16)

References (28)
  • 2
    • 0029890948 scopus 로고    scopus 로고
    • Radiochromic film as a radiotherapy surface-dose detector
    • Butson M.J., Mathur J.N., and Metcalfe P.E. Radiochromic film as a radiotherapy surface-dose detector. Phys. Med. Biol. 41 (1996) 1073-1078
    • (1996) Phys. Med. Biol. , vol.41 , pp. 1073-1078
    • Butson, M.J.1    Mathur, J.N.2    Metcalfe, P.E.3
  • 3
  • 5
    • 0031899494 scopus 로고    scopus 로고
    • Calibration of a MOSFET detection system for 6-MV in vivo dosimetry
    • Scalchi P., and Francescon P. Calibration of a MOSFET detection system for 6-MV in vivo dosimetry. Int. J. Radiat. Oncol. Biol. Phys. 40 (1998) 987-993
    • (1998) Int. J. Radiat. Oncol. Biol. Phys. , vol.40 , pp. 987-993
    • Scalchi, P.1    Francescon, P.2
  • 7
    • 0036390047 scopus 로고    scopus 로고
    • MOSFET dosimetry on modern radiation oncology modalities
    • Rosenfeld A.B. MOSFET dosimetry on modern radiation oncology modalities. Rad. Prot. Dosimetry 101 (2002) 393-398
    • (2002) Rad. Prot. Dosimetry , vol.101 , pp. 393-398
    • Rosenfeld, A.B.1
  • 8
    • 4444363205 scopus 로고    scopus 로고
    • Development of a RadFET linear array for intracavitary in vivo dosimetry during external beam radiotherapy and brachytherapy
    • Price R.A., Benson C., Joyce M.J., and Rodgers K. Development of a RadFET linear array for intracavitary in vivo dosimetry during external beam radiotherapy and brachytherapy. IEEE Trans. Nucl. Sci. 51 4 (2004) 1420-1426
    • (2004) IEEE Trans. Nucl. Sci. , vol.51 , Issue.4 , pp. 1420-1426
    • Price, R.A.1    Benson, C.2    Joyce, M.J.3    Rodgers, K.4
  • 9
    • 30844464324 scopus 로고    scopus 로고
    • Towards an optimum design of a P-MOS radiation detector for use in high-energy medical photon beams and neutron facilities: analysis of activation materials
    • Price R.A. Towards an optimum design of a P-MOS radiation detector for use in high-energy medical photon beams and neutron facilities: analysis of activation materials. Rad. Prot. Dosimetry 115 1-4 (2005) 386-390
    • (2005) Rad. Prot. Dosimetry , vol.115 , Issue.1-4 , pp. 386-390
    • Price, R.A.1
  • 10
    • 4344564594 scopus 로고    scopus 로고
    • Theoretical modeling and experimental investigation of MIS radiation sensor with giant internal signal amplification
    • Malik A., Grimalsky V., Jacome A.T., and Durini D. Theoretical modeling and experimental investigation of MIS radiation sensor with giant internal signal amplification. Sens. Actuators A 114 (2004) 319-326
    • (2004) Sens. Actuators A , vol.114 , pp. 319-326
    • Malik, A.1    Grimalsky, V.2    Jacome, A.T.3    Durini, D.4
  • 12
    • 33748352766 scopus 로고    scopus 로고
    • RADFET response to proton irradiation under different biasing configurations
    • Jaksic A., Kimoto Y., Mohammadzadeh A., and Hajdas W. RADFET response to proton irradiation under different biasing configurations. IEEE Trans. Nucl. Sci. 53 4 (2006) 2004-2007
    • (2006) IEEE Trans. Nucl. Sci. , vol.53 , Issue.4 , pp. 2004-2007
    • Jaksic, A.1    Kimoto, Y.2    Mohammadzadeh, A.3    Hajdas, W.4
  • 13
    • 0035355333 scopus 로고    scopus 로고
    • Comparison of pMOSFET total dose response for Co-60 gammas and high-energy protons
    • Pease R.L., Simons M., and Marshall P. Comparison of pMOSFET total dose response for Co-60 gammas and high-energy protons. IEEE Trans. Nucl. Sci. 48 3 (2001) 908-912
    • (2001) IEEE Trans. Nucl. Sci. , vol.48 , Issue.3 , pp. 908-912
    • Pease, R.L.1    Simons, M.2    Marshall, P.3
  • 14
    • 0022904335 scopus 로고
    • RADFET: a review of the use of metaloxide-silicon devices as integrating dosimeters
    • Holmes-Siedle A., and Adams L. RADFET: a review of the use of metaloxide-silicon devices as integrating dosimeters. Radiat. Phys. Chem. 28 (1986) 235-244
    • (1986) Radiat. Phys. Chem. , vol.28 , pp. 235-244
    • Holmes-Siedle, A.1    Adams, L.2
  • 15
    • 0028213977 scopus 로고
    • Evaluation of a dual bias metal oxide-silicon semiconductor field effect transistor detector as radiation dosimeter
    • Soubra M., Cygler J., and Mackay G. Evaluation of a dual bias metal oxide-silicon semiconductor field effect transistor detector as radiation dosimeter. Med. Phys. 21 (1994) 567-572
    • (1994) Med. Phys. , vol.21 , pp. 567-572
    • Soubra, M.1    Cygler, J.2    Mackay, G.3
  • 16
    • 13644255923 scopus 로고    scopus 로고
    • Application of commercial MOSFET detectors for in vivo dosimetry in the therapeutic X-ray range from 80 kV to 250 kV
    • Ehringfeld C., Schmid S., Poljanc K., Kirisits C., Aiginger H., and Georg D. Application of commercial MOSFET detectors for in vivo dosimetry in the therapeutic X-ray range from 80 kV to 250 kV. Phys. Med. Biol. 50 (2005) 289-303
    • (2005) Phys. Med. Biol. , vol.50 , pp. 289-303
    • Ehringfeld, C.1    Schmid, S.2    Poljanc, K.3    Kirisits, C.4    Aiginger, H.5    Georg, D.6
  • 18
    • 84930881640 scopus 로고
    • Effects of ionizing radiation on oxidized silicon surfaces and planar devices
    • Snow E.H., Grove A.S., and Fitzgerald D.J. Effects of ionizing radiation on oxidized silicon surfaces and planar devices. Proc. IEEE 55 (1967) 1168
    • (1967) Proc. IEEE , vol.55 , pp. 1168
    • Snow, E.H.1    Grove, A.S.2    Fitzgerald, D.J.3
  • 21
    • 18544364209 scopus 로고    scopus 로고
    • Radiation-induced defects in MOS structures after irradiation with high-energy Ar, Kr, Bi heavy ions
    • Stano J., Skuratov V.A., Ziska M., and Kovac P. Radiation-induced defects in MOS structures after irradiation with high-energy Ar, Kr, Bi heavy ions. Vacuum 78 (2005) 627-630
    • (2005) Vacuum , vol.78 , pp. 627-630
    • Stano, J.1    Skuratov, V.A.2    Ziska, M.3    Kovac, P.4
  • 22
    • 36049047283 scopus 로고
    • Reduction of the radiation sensitivity of MOS structures by irradiation-anneal cycle treatment
    • Kaschieva S. Reduction of the radiation sensitivity of MOS structures by irradiation-anneal cycle treatment. Nucl. Instrum. Meth. Phys. Res. B74 (1993) 396
    • (1993) Nucl. Instrum. Meth. Phys. Res. , vol.B74 , pp. 396
    • Kaschieva, S.1
  • 24
    • 0032652796 scopus 로고    scopus 로고
    • Annealing of radiation damage in MOS devices: study by diode parameter determination
    • Bendada E., and Rais K. Annealing of radiation damage in MOS devices: study by diode parameter determination. Eur. Phys. J. AP 5 (1999) 91-94
    • (1999) Eur. Phys. J. AP , vol.5 , pp. 91-94
    • Bendada, E.1    Rais, K.2
  • 25
    • 36348986408 scopus 로고    scopus 로고
    • S.M. Sze, VLSI Technology, New Jersey, 1983, p. 376.
  • 26
    • 0016118460 scopus 로고
    • The spece-charge dosimeter, general principles of a new method of radiation detection
    • Holmes-Siedle A. The spece-charge dosimeter, general principles of a new method of radiation detection. Nucl. Instrum. Meth. 121 (1974) 169
    • (1974) Nucl. Instrum. Meth. , vol.121 , pp. 169
    • Holmes-Siedle, A.1
  • 28
    • 0020797319 scopus 로고
    • Rapid interface parameterization using a single MOS conductance curve
    • Brews J.R. Rapid interface parameterization using a single MOS conductance curve. Solid State Electron. 26 8 (1983) 711-716
    • (1983) Solid State Electron. , vol.26 , Issue.8 , pp. 711-716
    • Brews, J.R.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.