Annealing of radiation damage in MOS devices: Study by diode parameter determination

EPJ Applied Physics

Volumn 5, Issue 1, 1999, Pages 91-94

  Bendada, E ^a   Rais K ^b  

^a MOULAY ISMAIL UNIVERSITY   (Morocco)

^b FACULTÉ DES SCIENCES   (Morocco)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; ELECTRIC CURRENTS; ELECTRIC RESISTANCE; GAMMA RAYS; RADIATION DAMAGE; SEMICONDUCTOR DEVICE MODELS;

BODY-DRAIN JUNCTION;

MOSFET DEVICES;

EID: 0032652796     PISSN: 12860042     EISSN: None     Source Type: Journal    
DOI: 10.1051/epjap:1999114     Document Type: Article

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