Lateral nonuniformity of effective oxide charges in MOS capacitors with A12O3 gate dielectrics

IEEE Transactions on Electron Devices

Volumn 53, Issue 7, 2006, Pages 1608-1614

  Huang, Szu Wei ^a   Hwu, Jenn Gwo ^b  

^a NANYA TECHNOLOGY CORPORATION   (Taiwan)

^b NATIONAL TAIWAN UNIVERSITY   (Taiwan)

Author keywords

Aluminum oxide (A12O3); Anodization; Lateral nonuniformity (LNU); MOS; Nitric acid oxidation; Terman's method

Indexed keywords

ANODIC OXIDATION; DIELECTRIC MATERIALS; GATES (TRANSISTOR); NITRIC ACID; PERMITTIVITY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE MODELS;

ALUMINUM OXIDE; LATERAL NONUNIFORMITY; NITRIC-ACID OXIDATION; TERMAN'S METHOD;

MOS CAPACITORS;

EID: 33745714970     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2006.875816     Document Type: Article

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