A study on the effectiveness of different cap oxides for preventing fluorine out-diffusion from FSG

International Symposium on VLSI Technology, Systems, and Applications, Proceedings

Volumn , Issue , 2001, Pages 257-260

  Chou, P F ^a   Cheng, Y L ^a  

^a Taiwan Semiconductors Manufacturing Company   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DIFFUSION; ELECTRON BEAMS; FLUORINE; ION BEAMS; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GLASS; SILICATES; SILICON WAFERS; STACKING FAULTS; SUBSTRATES; THERMAL EFFECTS;

CAP OXIDES; FLUORINATED SILICATE GLASS (FSG) FILM STACKS;

SEMICONDUCTING FILMS;

EID: 0034842573     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (10)

1. Methods and needs for low k material research
2. Improvement of adhesion properties of fluorinated silica glass films by nitrous oxide plasma treatment
3. Study of fluorine stability fluoro-silicate glass and effects on dielectric properties