Effective-work-function control by varying the TiN thickness in poly-Si/ TiN gate electrodes for scaled high-κ CMOSFETs

IEEE Electron Device Letters

Volumn 30, Issue 5, 2009, Pages 466-468

  Kadoshima, Masaru ^a   Matsuki, Takeo ^a   Miyazaki, Seiichi ^b   Shiraishi, Kenji ^c   Chikyo, Chikyo ^d   Yamada, Keisaku ^e   Aoyama, Takayuki ^a   Nara, Yasuo ^a   Ohji, Yuzuru ^a  

^a SEMICONDUCTOR LEADING EDGE TECHNOLOGIES INC   (Japan)

^b HIROSHIMA UNIVERSITY   (Japan)

^c UNIVERSITY OF TSUKUBA   (Japan)

^d NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^e WASEDA UNIVERSITY   (Japan)

Author keywords

Effective work function; Flatband voltage; HfSiON; Metal gate; Poly Si TiN; TiN thickness

Indexed keywords

EFFECTIVE WORK FUNCTION; FLATBAND VOLTAGE; HFSION; METAL GATE; POLY-SI/TIN;

CONTROLLABILITY; ELECTRODES; HAFNIUM COMPOUNDS; METALS; MOSFET DEVICES; POLYSILICON; REFRACTORY METAL COMPOUNDS; TITANIUM NITRIDE; WORK FUNCTION;

TITANIUM COMPOUNDS;

EID: 67349191175     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2009.2016585     Document Type: Article

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