Device physics and characteristics of graphene nanoribbon tunneling FETs

IEEE Transactions on Electron Devices

Volumn 57, Issue 11, 2010, Pages 3144-3152

  Chin, Sai Kong ^a   Seah, Dawei ^b   Lam, Kai Tak ^b   Samudra, Ganesh S ^b   Liang, Gengchiau ^b  

^a INSTITUTE OF HIGH PERFORMANCE COMPUTING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

Author keywords

Dirac equation; graphene nanoribbons (GNR); nonequilibrium Green's function (NEGF); tunneling FET

Indexed keywords

CHANNEL LENGTH; DEVICE PHYSICS; DIRAC EQUATIONS; DOPING CONCENTRATION; DRAIN DOPING; EFFECTIVE MASS; GRAPHENE NANO-RIBBON; GRAPHENE NANORIBBONS (GNR); HIGHLY NONLINEAR; INTERNATIONAL TECHNOLOGY ROADMAP FOR SEMICONDUCTORS; INTRINSIC DELAY; NON-EQUILIBRIUM GREEN'S FUNCTION; NONEQUILIBRIUM GREEN'S FUNCTION (NEGF); POISSON SOLVERS; POWER-DELAY PRODUCTS; ROADMAP; SCALING BEHAVIOR; SIMULATION STUDIES; SUBTHRESHOLD SWING; TUNNELING FET; VARYING TEMPERATURE;

GRAPHENE; HUBBARD MODEL; LINEAR EQUATIONS; MESFET DEVICES; POISSON EQUATION; SEMICONDUCTOR DOPING;

GREEN'S FUNCTION;

EID: 78049247533     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2065809     Document Type: Article

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