Inverse temperature dependence of subthreshold slope in graphene nanoribbon tunneling transistors

Applied Physics Letters

Volumn 96, Issue 1, 2010, Pages

  Yoon, Youngki ^a   Salahuddin, Sayeef ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND TO BAND TUNNELING; GRAPHENE NANO-RIBBON; INVERSE TEMPERATURES; NEGATIVE SLOPE; NON-LINEAR THRESHOLDS; NON-LINEARITY; NONLINEAR FUNCTIONS; SUBTHRESHOLD SLOPE; SUBTHRESHOLD SWING; TEMPERATURE DEPENDENCE; TRANSPORT CALCULATION; TUNNELING CURRENT; VOLTAGE SHIFT;

GATES (TRANSISTOR); GRAPHENE; GRAPHITE; TEMPERATURE DISTRIBUTION; THRESHOLD VOLTAGE; TUNNELING (EXCAVATION); WIND TUNNELS;

DRAIN CURRENT;

EID: 75749097296     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3280379     Document Type: Article

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