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Volumn 49, Issue 4 PART 2, 2010, Pages

Effect of Ribbon Width and doping concentration on device performance of graphene nanoribbon tunneling field-effect transistors

(5) Lam, Kai Tak a Chin, Sai Kong b Seah, Da Wei a Bala Kumar, S a Liang, Gengchiau a,b

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

b INSTITUTE OF HIGH PERFORMANCE COMPUTING (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

DESIGN REQUIREMENTS; DEVICE CHARACTERISTICS; DEVICE PERFORMANCE; DIRAC EQUATIONS; DOPING CONCENTRATION; DRIVE CURRENTS; GRAPHENE NANO-RIBBON; NON-EQUILIBRIUM GREEN'S FUNCTION; OFF-STATE CURRENT; POISSON SOLVERS; SOURCE AND DRAINS; SUBTHRESHOLD SWING; TUNNELING FIELD-EFFECT TRANSISTORS;

CONCENTRATION (PROCESS); ELECTRONIC PROPERTIES; GRAPHENE; GRAPHITE; GREEN'S FUNCTION; LINEAR EQUATIONS; POISSON EQUATION; TUNNELING (EXCAVATION);

FIELD EFFECT TRANSISTORS;

EID: 77952726664 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.1143/JJAP.49.04DJ10 Document Type: Article

Times cited : (6)

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