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Volumn 108, Issue 7, 2010, Pages

Surface damages in diamond by Ar/O2 plasma and their effect on the electrical and electrochemical characteristics of boron-doped layers

(5) Denisenko, A a Romanyuk, A b Pietzka, C a Scharpf, J a Kohn, E a

a UNIVERSITY OF ULM (Germany)

b UNIVERSITY OF BASEL (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BORON DOPED DIAMOND; BORON-DOPED DIAMOND LAYERS; BORON-DOPED LAYER; ELECTROCHEMICAL CHARACTERISTICS; ELECTRODE ARRAYS; EPITAXIAL SINGLE CRYSTALS; GEOMETRICAL CONFIGURATIONS; INITIAL STATE; INSULATING SURFACES; MICROWAVE HYDROGEN PLASMAS; NON-UNIFORM LAYER; NONCONDUCTIVE SURFACES; ORDERS OF MAGNITUDE; OXYGEN PLASMAS; PLASMA PROCESS; PLASMA-INDUCED DAMAGE; RF-POWER; SELF-BIAS; SUBMICROMETERS; SURFACE CHARACTERISTICS; SURFACE DAMAGES; THEORETICAL LIMITS; WET CHEMICAL OXIDATION; X RAY PHOTOEMISSION SPECTROSCOPY; XPS;

AMORPHOUS CARBON; ATOMIC FORCE MICROSCOPY; ATOMIC SPECTROSCOPY; BORON; DIAMONDS; ELECTROCHEMICAL ELECTRODES; EMISSION SPECTROSCOPY; OXYGEN; PLASMA ETCHING; PLASMAS; REACTIVE ION ETCHING; SINGLE CRYSTALS; X RAY PHOTOELECTRON SPECTROSCOPY;

ELECTROCHEMICAL ETCHING;

EID: 77958195737 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3489986 Document Type: Article

Times cited : (20)

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