Device operation of p-i-p type diamond metal-insulator-semiconductor field effect transistors with sub-micrometer channel

Diamond and Related Materials

Volumn 14, Issue 3-7, 2005, Pages 509-513

  Kawakami, Nobuyuki ^a   Yokota, Yoshihiro ^a   Hayashi, Kazushi ^a   Tachibana, Takeshi ^a   Kobashi, Koji ^a  

^a KOBE STEEL LTD   (Japan)

Author keywords

Diamond; FET; p i p transistor; Space charge limited current

Indexed keywords

CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; CURRENT DENSITY; EPITAXIAL GROWTH; ION IMPLANTATION; MASS SPECTROMETRY; MICROWAVES; MISFET DEVICES; PLASMAS;

CURRENT FLOW; P-I-P TRANSISTOR; SELECTIVE EPITAXY; SPACE-CHARGE-LIMITED-CURRENT;

DIAMONDS;

EID: 18444391214     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2004.12.029     Document Type: Conference Paper

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