Reactive ion etching of diamond in CF4, O2, O2 and Ar-based mixtures

Journal of Materials Science

Volumn 36, Issue 14, 2001, Pages 3453-3459

  Leech, P W ^a   Reeves, G K ^b   Holland, A ^b  

^a CSIRO   (Australia)

^b RMIT UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ARGON; COMPOSITION; MIXTURES; OXYGEN; PLASMAS; REACTIVE ION ETCHING; SPUTTERING; SURFACE ROUGHNESS;

BIAS VOLTAGE; FLOW RATE; PHYSICAL SPUTTERING;

DIAMOND FILMS;

EID: 0035878427     PISSN: 00222461     EISSN: None     Source Type: Journal    
DOI: 10.1023/A:1017964129419     Document Type: Article

References (20)