Surface structure and surface barrier characteristics of boron-doped diamond in electrolytes after CF4 plasma treatment in RF-barrel reactor

Diamond and Related Materials

Volumn 19, Issue 5-6, 2010, Pages 423-427

  Denisenko, A ^a   Romanyuk, A ^b   Pietzka, C ^a   Scharpf, J ^a   Kohn, E ^a  

^a UNIVERSITY OF ULM   (Germany)

^b UNIVERSITY OF BASEL   (Switzerland)

Author keywords

Diamond electrode; Plasma fluorination; XPS

Indexed keywords

BARREL REACTORS; BORON DOPED DIAMOND; CAPACITANCE VOLTAGE CHARACTERISTIC; DIAMOND ELECTRODE; ELECTRICAL MODELS; ELECTRONIC SURFACE; FIXED PARAMETERS; HYDROGEN TERMINATION; METAL OXIDE SEMICONDUCTOR STRUCTURES; OXYGEN GROUPS; PLASMA OXIDATION; PLASMA PROCESS; PLASMA TREATMENT; SINGLE-CRYSTALLINE; SURFACE AREA; SURFACE BARRIER; SURFACE CHARACTERISTICS; SURFACE TERMINATION; XPS;

BORON; DIAMONDS; ELECTROCHEMICAL ELECTRODES; ELECTROLYTES; FLUORINATION; FLUORINE; HALOGENATION; OXYGEN; PLASMA APPLICATIONS; SURFACE STRUCTURE; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMAS;

EID: 77950368674     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2009.12.016     Document Type: Article

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