INP DHBT-based ICs for 100 Gbit/s data transmission

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2008, Pages

  Driad, R ^a   Makon, R E ^a   Hurm, V ^a   Schneider, K ^a   Benkhelifa, F ^a   Losch R ^a   Rosenzweig, J ^a  

^a FRAUNHOFER INSTITUTE FOR APPLIED SOLID STATE PHYSICS IAF   (Germany)

Author keywords

Distributed amplifier; Ethernet; Heterojunction bipolar transistors; Indium phosphide; Integrated circuits; Multiplexer

Indexed keywords

2:1 MULTIPLEXERS; CURRENT GAINS; DATA RATES; DATA TRANSMISSION; DISTRIBUTED AMPLIFIER; INP-DHBT; MIXED SIGNAL; MULTIPLEXER;

BICMOS TECHNOLOGY; BIPOLAR TRANSISTORS; BROADBAND AMPLIFIERS; COMMUNICATION SYSTEMS; ETHERNET; HETEROJUNCTIONS; INDIUM; INDIUM PHOSPHIDE; INTEGRATED CIRCUITS; MULTIPLEXING; MULTIPLEXING EQUIPMENT; OPTICAL COMMUNICATION;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 70149103626     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ICIPRM.2008.4702960     Document Type: Conference Paper

References (13)

1. R. H. Derksen, M. Möller, C. Schubert, "100 Gbit/s full-ETDM transmission technologies" Comp. Sem. IC Symp. (CSICS) 2007, Portland, Oregon, USA, Oct. 14-17, Dig. Tech. Pap., 89-92.
2. Y. Suzuki, M. Mamada, and Z. Yamazaki, "Over-100-Gb/s 1:2 demultiplexer based on InP HBT technology," IEEE J. Solid-State Circuits, vol. 42(11), pp. 2594-2599, 2007.
3. th Int. Conf. on InP and Related Materials, pp. 439-442, 2002.
4. max over 300 GHz in a new manufacturable technology," IEEE Electron Device Letter, vol. 25(8), pp. 520-522, 2004.
5. K. Shinohara, T. Matsui, Y. Yamashita, A. Endoh, K. Hikosaka, T. Mimura, I. Watanabe, S. Hiyamizu: "HEMTs with ultrahigh cutoff frequency" Int. Symposium on Compound Semiconductors, pp. 124-131, 2003.
6. T=350/300 GHz and gate delay below 3.3 ps," Int. Electron Devices Meeting, pp. 247-250, 2004.
7. R. Aidam, R. Lösch, M. Walther, R. Driad, S. Kallenbach, "Multiwafer solid source phosphorus MBE on InP for DHBTs and aluminum free lasers," 16th Int. Conf. on InP and Related Materials, 2004, pp. 342-345.
8. max," International Electron Devices Meeting, pp. 553-556, 2004.
9. max," IEEE Electron Device Letters, 26 (1), p 11-13, 2005.
10. R. Driad, R. E. Makon, K. Schneider, U. Nowotny, R. Aidam, R. Quay, M. Schlechtweg, M. Mikulla, G. Weimann, "InP DHBT based IC technology for over 80 Gbit/s data communications," IEICE Trans. Electron. vol. E89-C no. 7, pp. 931-936, July 2006.
11. Y. Baeyens, G. Georgiou, J. S. Weiner, A. Leven, V. Houtsma, P. Paschke, Q. Lee, R. F. Kopf, Y. Yang, L. Chua, C. Chen, C. T. Liu, Y. K. Chen, "InP D-HBT ICs for 40 Gbit/s and higher bitrate lightwave transceivers," IEEE J. Solid State Circuits, 37(9), pp. 1152-1159, 2002.
12. K. W. Kobayashi, R. Esfandiari, and A. K. Oki, "A novel HBT distributed amplifier design topology based on attenuation compensation techniques," Int. Microwave Symp. Dig., vol. 1, pp. 447-450, 1994.
13. K. Schneider, R. Driad, R. E. Makon and G. Weimann, "Distributed amplifier MMIC with 21 dB gain and 90 GHz bandwidth using InP-based DHBTs," Comp. Sem. IC Symp. (CSICS) 2007, Portland, Oregon, USA, Oct. 14-17, Dig. Tech. Pap., 67-70.